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Analysis of the nano-structural properties of amorphous hydrogenated silicon-carbon alloys

Amorphous hydrogenated silicon-carbon thin films were deposited by sputtering of silicon target in gas mixture containing hydrogen and carbon atoms, with extensive variation in hydrogen content and carbon to silicon ratio. The composition of specimens and theirs structural ordering on atom level was estimated by IBA (Ion Beam Analysis), e.g. RBS (Rutherford Back Scattering) and ERDA (Elastic Recoil Detection Analysis), FTIR (Fourier Transform Infrared) and Raman spectroscopy. The spectral distribution of dielectric function was estimated upon standard transmittance and reflectance measurements in uv-visible part of the spectrum. The homogeneity of deposited films on nano-scale was examined by GISAXS (Grazing Incidence Small Angle X-ray Scattering), performed on ELETTRA synchrotron radiation source, Trieste (Italy). Results of GISAXS spectra of all of measured specimens indicate presence of "particles" in the "bulk" of the films, with size distribution between 1 and 2 nm and mean values variation between 1 and 6 nm. In order to determine the constitution of the "particles", the specimens were modelled as a multy-component material with certain dimensions and certain optical properties for each of component, considering the results of all of applied methods. The possibilities of this kind of analysis have been discussed on several typical examples.

amrphous silicon carbide; nanostructure; SAXS; IBA

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