engleski

Investigation of S2 Defect in H implanted CZ-Si by EPR

Electron paramagnetic resonance spectra of S2 paramagnetic center in Czochralski silicon (CZ-Si) produced by H2+ ion implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g=2.0066, which, then broadens and splits into an anisotropic spectrum at 120 K. From the g tensor evaluated at 120 K, it has been deduced that the spectrum originated from the center with triclinic symmetry. The involvement of hydrogen atoms in the center has been discussed.

EPR; silicon; hydrogen related defects

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