engleski

Specific features of the optical absorption edge anisotropy in In_4(P_2S_6)_3 layered crystals

The optical absorption edge of In_4(P_2S_6)_3 layered crystals is studied in the temperature range 77-355 K. In the spectral range of direct optical transitions the absorption edge is of Urbach shape. Electron-phonon interaction result in the smearing of energy bands and, consequently, in appearing of Urbach absorption tails. The temperature variation of the optical pseudogap E_g and the absorption edge energy width w are well described in the Einstein model. Strong anisotropy of the absorption edge spectral position and shape, as well as of electron-phonon interaction, is revealed.

semiconductors; crystal growth; defects; optical properties

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