Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi

Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon (CROSBI ID 77524)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Rakvin, Boris ; Pivac, Branko ; Reitano, R. Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon // Journal of applied physics, 81 (1997), 8; 3453-3456

Podaci o odgovornosti

Rakvin, Boris ; Pivac, Branko ; Reitano, R.

engleski

Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon

A detailed analysis of the electon paramagnetic resonance line shape was performed on amorphous Si samples obtained by Kr+ ion implantation. The Lorentzian character and behavior upon annealing was explained via a strong exchange interaction, leading to a cluster model for the spin density distribution. The saturation measurements are shown to be a convenient method to study structural changes caused by thermal annealing. The spin density distribution (as described with the cluster model) imposes a clear difference between amorphous Si material obtained by ion implantation and one obtained by evaporation and/or chemical vapor deposition.

EPR; amorphous silicon; ion implantation; defects

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o izdanju

81 (8)

1997.

3453-3456

objavljeno

0021-8979

Povezanost rada

Fizika, Kemija

Indeksiranost