Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon (CROSBI ID 77524)
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Podaci o odgovornosti
Rakvin, Boris ; Pivac, Branko ; Reitano, R.
engleski
Electron paramagnetic Resonance Study of Amorphous Silicon Produced by Kr^+ Ion Implantation into Silicon
A detailed analysis of the electon paramagnetic resonance line shape was performed on amorphous Si samples obtained by Kr+ ion implantation. The Lorentzian character and behavior upon annealing was explained via a strong exchange interaction, leading to a cluster model for the spin density distribution. The saturation measurements are shown to be a convenient method to study structural changes caused by thermal annealing. The spin density distribution (as described with the cluster model) imposes a clear difference between amorphous Si material obtained by ion implantation and one obtained by evaporation and/or chemical vapor deposition.
EPR; amorphous silicon; ion implantation; defects
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