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Depolarization crossovers in the microwave response of silicon crystals in slab geometry (CROSBI ID 110388)

Prilog u časopisu | izvorni znanstveni rad

Babić, Bakir ; Basletić, Mario ; Dulčić, Antonije ; Požek, Miroslav Depolarization crossovers in the microwave response of silicon crystals in slab geometry // Fizika A, 15 (2006), 25-34-x

Podaci o odgovornosti

Babić, Bakir ; Basletić, Mario ; Dulčić, Antonije ; Požek, Miroslav

engleski

Depolarization crossovers in the microwave response of silicon crystals in slab geometry

Microwave cavity perturbation measurements have been performed on several n-type silicon samples with different depolarization factors due to sample geometries. The general solution for the complex frequency shift in slab geometry was discussed for the specific case of semiconductors. The depolarization crossovers predicted by the theory have been experimentally observed. Their relative intensities suggest that the imaginary part of the complex conductivity of semiconductors has to be taken into account. Electron scattering time has been infered from the microwave measurements.

depolarization crossover; microwave; silicon

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Podaci o izdanju

15

2006.

25-34-x

objavljeno

1330-0008

Povezanost rada

Fizika