engleski

Oxygen influence on carbon redistribution in thermally treated EFG poly-Si

We studied carbon bahavior upon isochronal thermal treatment in wide temperature range for polycrystalline silicon EFG material oxygen-lean and oxygen-rich. It is shown that carbon concentration is not affected with annealing up to very high temperatures irrespectively of oxygen presence in material. Only at very high temperatures oxygen presence, however, stimulates a much higher carbon precipitation. The observed is explained with the silicon self-interstitials availability and interaction with carbon and/or its trapping at structural defects abondantly present in the bulk.

silicon; defects; IR spectroscopy

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