engleski

Influence of technological process on the initial and stabilized performance of a-Si:H large area modules

Long-term outdoor degradation experiments were undertaken with large-area p-i-n and tandem a-Si modules in open-circuit and load conditions. Modules were manufactured by different technological processes with or without the wide band gap graded buffer interface layer, or with medium hydrogen-diluted i-layer at 140° and 180°C. All modules reach an equilibrium state after 45 days of exposure. The best results have been obtained with hydrogen dilution with less than 8% decrease in effciency from the initial value.

solar cells; amorphous silicon

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