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X-ray diffraction study of structural changes in GaAs crystalline compound induced by high-energy ball milling and subsequent post-annealing tretments

X-ray diffraction method was applied to detect structural changes in gallium arsenide (GaAs) crystalline compound induced by a high-energy ball-milling and subsequent post-annealing treatments. During milling (up to 10 h) in air at room temperature the GaAs crystals disintegrate into two phases: one crystalline phase indentified as an arsenic oxide (As2O3) and one amorphous phase. During the subsequent annealing (up to 1 h) in the temperature range 450-750 0C, the amorpous phase transforms into gallium oxide (Ga2O3) phase, while As2O3 phase evaporates and escapes from the solid milled sample. This study is interesting as a recycling path of GaAs and is convenient from the ecological aspect.

X-ray diffraction; Structural changes; Gallium arsenide (GaAs) crystalline compound; High-energy ball milling; As2O3; Ga2O3.

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