engleski

Characteristics of 30 nm Long Vertical Silicon-on-Nothing (SON) MOSFET

The Vertical Fully Depleted Silicon-on-Nothing (VFDSONFET), the existing Silicon-on-Nothing (SON) MOSFET and the bulk-Si MOSFET with 30 nm long hannels are compared using the two dimensional device simulator. The VFDSONFET is shown to have the best subthreshold characteristics because of the absence of the silicon substrate. The further scaling of the VFDSONFET gate oxide is examined, showing improvement in the device performance. The current manufacturing process of the VFDSONFET results in deep source and drain regions. It is shown that this increase in depth has small influence on drain- nduced barrier lowering and negligible effects on other characteristics. The possible modification of the VFDSONFET buried oxide confirms the importance of using thin, low-k dielectric for the buried oxide.

vertical MOSFET; silicon on nothing; short channel effects

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