engleski

Studying of trap levels by the use of focused ion beams

We laterally irradiated fully depleted CdZnTe samples by a 5 MeV focused proton beam at low temperatures to create electron-hole pairs and fill traps. Trapped charge was then released on heating by thermal re-emission and thermally stimulated current (TSC) was recorded as a function of temperature between 100 and 300 K. We have shown in these experiments that it is possible to distinguish between electron and hole traps by doing the excitation in the vicinity of the appropriate electrode. In conjunction with the ion beam induced charge (IBIC) and time-resolved IBIC (TRIBIC) technique such experiments can be used to characterize semiconductor materials in a more detailed way.

IBIC; TRIBIC; CdZnTe; trapping; temperature

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