Comparison of Hetero and Mono FET and BT Structures (CROSBI ID 509895)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Očevčić, Hrvoje ; Švedek, Tomislav
engleski
Comparison of Hetero and Mono FET and BT Structures
The properties of hetero and mono FET and BT devices are reviewed and discussed in the context of their suitability for high frequency and noise. GaAs based devices have a defined place in commercial and many more applications. The Heterojunction Bipolar Transistor (HBT) basically is a modified bipolar transistor. The emitter and base layers are formed with different bandgap material. The emitter having the wider band gap, thus the emitter delivers a barrier against the hole injection into the base. HBT technology has become a major player in wireless communication, power amplifier, mixer, and frequency synthesizer applications. HBTs extend the advantages of silicon bipolar transistors to significantly higher frequencies. The HEMT delivers the lowest noise figure with a high gain performance. This high gain in some cases is a disadvantage for problem free volume applications in low frequency range.
heterostructures; FET; BT; GaAs
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Podaci o prilogu
597 - 600-x.
2005.
objavljeno
Podaci o matičnoj publikaciji
7th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services
Podaci o skupu
TELSIKS 2005
predavanje
28.09.2005-30.09.2005
Crna Gora; Niš, Srbija