engleski

A GISAXS study of SiO/SiO2 superlattice

We present a study on amorphous SiO/SiO2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). From the 2D GISAXS pattern it is possible to determine the shape, size and inter-particle distance. Amorphous SiO/SiO2 superlattices were prepared by a high vacuum evaporation of a 2nm thin films of SiO and SiO2 (10 layers each) on Si (100) substrate. Rotation of the Si substrate during evaporation enables homogeneity of films over the whole substrate. After evaporation samples were annealed at 1050 °C and 1100 °C for 1h in vacuum. Analysis of the 2D GISAXS pattern has shown that Si nanocrystals are present in the annealed samples. Using a Guinier approximation, inter-nanocrystal distance (5 nm) and radius of gyration (1.5 nm) have been obtained.

SiO/SiO2; superlattice; GISAXS

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