engleski

STRUCTURAL FEATURES OF AlxW1-x THIN FILMS DEPOSITED ON MONO-Si AND SAPPHIRE SUBSTRATES

Prominent texture and exotic crystal structure appear in the Al75W25 thin films deposited on sapphire (Al2O3) monocrystalline substrate in the temperature range 250°C to 400°C. Partially ordered structure was observed for substrate temperature below 250°C. This is in contrast to the structural features of films deposited on mono-Si substrates, where disordered structure and no texture appear up to 400°C. XRD patterns of the film deposited on sapphire at 400°C disclosed preferred crystalline orientation in the partially ordered average structure, while the GISAXS spectra revealed presence of nanoparticles with the size: 2-4 nm. The imprint of this texture remained even after annealing at 850°C. XRD and GISAXS study of films deposited onto mono-Si substrates indicated homogenous uniform disordered structure for all deposition temperatures.

Aluminum; tungsten; thin films

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