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Properties of Lateral Bipolar Transistors in SiGe Technology

Properties of lateral bipolar transistors in SiGe technology are investigated using the 2D device simulation program MEDICI. High frequency performance is evaluated through cutoff (fT) and maximum oscillation frequency (fmax). It is shown that good properties of lateral transistors such as small parasitic elements are kept in SiGe technology resulting in high fmax while cutoff frequency is comparable to advanced vertical SiGe transistors. Scaling properties are analyzed by varying device geometry. It is shown that lithography dependant horizontal scaling will reduce parasitic elements. Lithography independent vertical scaling is possible as well, resulting in further decrease of parasitic elements and extremely high fmax which opens up the way for more aggressive intrinsic transistor profile scaling.

lateral bipolar transistors; vertical bipolar transistor; HCBT; silicon germanium base; cutoff frequency; maximum oscillation frequency; scaling

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