engleski

Simulation of InSb Devices Using Drift-Diffusion Equations

A methodology for simulation of InSb devices in commercial drift– diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of low leakage, room temperature InSb photodiodes.

InSb; Photodiodes; Auger recombination; Drift– diffusion simulation

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