engleski

GISAXS study of Si nanocrystals formation in SiO2 thin films

We present a study on amorphous SiO/SiO2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) on Si(100) substrate. After the evaporation, samples were annealed at 1100  C for 1h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained.

Si nanostructures ; SiO/SiO2 amorphous superlattice ; small angle X-ray scattering

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