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Structure and optical properties of porous silicon prepared on thin epitaxial silocon layer on silicon substrates

The porous silicon samples were prepared by electrochemical etching1 of 10 micrometer tick p-type (111) silicon epitaxial layer grown on a thin 80 nm SiO_2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxial layer micro- and nano-pores of different sizes in dependence on HF concentration were obtained. The structural and optical properties of prepared samples were investigated by Raman and infrared spectroscopy and scanning electron microscopy (SEM).

Porous silicon; Silicon on insulator; Raman and infrared spectroscopy; SEM

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