Silicon nanoparticles formation in annealed SiO/SiO2 multilayers (CROSBI ID 522997)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | domaća recenzija
Podaci o odgovornosti
Capan, Ivana ; Dubček, Pavo ; Duguay, S. ; Zorc, Hrvoje ; Radić, Nikola ; Pivac, Branko ; Slaoui, A. ; Bernstorff, S.
engleski
Silicon nanoparticles formation in annealed SiO/SiO2 multilayers
We present a study on amorphous SiO/SiO2 superlattice using grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) on Si(100) substrate. After the evaporation, samples were annealed at 1100  C for 1h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained. The size of the growing nanoparticles in the direction perpendicular to the film surface is well controlled by the bilayer thickness. However, their size varies more significantly in the direction parallel to the film surface.
silicon; nanoparticles; multilayers
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Podaci o prilogu
18-18-x.
2006.
objavljeno
Podaci o matičnoj publikaciji
Radić, Nikola
Zagreb: Hrvatsko Vakuumsko Društvo (HVD)
Podaci o skupu
13. međunarodni sastanak. Vakuumska znanost i tehnika
poster
13.06.2006-13.06.2006
Koprivnica, Hrvatska