engleski

Crystallization kinetics of amorphous aluminum-tungsten thin films

Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al82W18 to Al62W38 compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-contolled process, whereas in films with the composition similar to the stoichiometric compound (Al4W), the interface-controlled crystallization probably occured.

amorphous thin films; Al-W; activation energy

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