Direct observation of defect levels in InN by soft x-ray absorption (CROSBI ID 132063)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Petravić, Mladen ; Deenapanray, P. N. K. ; Fraser, M. D. ; Soldatov, A. V. ; Yang, Y.-W. ; Anderson, P. A. ; Durbin, S. M.
engleski
Direct observation of defect levels in InN by soft x-ray absorption
We have used synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to study the electronic structure of nitrogen-related defects in InN(0001). Several defect levels within the band gap or the conduction band of InN were clearly resolved in NEXAFS spectra around the nitrogen K- edge. We attribute the level observed at 0.3 eV below the conduction band minimum (CBM) to interstitial nitrogen, the level at 1.7 eV above the CBM to antisite nitrogen, and a sharp resonance at 3.2 eV above the CBM to molecular nitrogen, in full agreement with theoretical simulations.
fine-structure; thin-films; band-gap; nitride
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Podaci o izdanju
110 (7)
2006.
2984-2987
objavljeno
1520-6106
10.1021/jp057140l