Silicon nanoparticles formation in annealed SiO/SiO2 multilayers (CROSBI ID 132193)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Kovačević, Ivana ; Dubček, Pavo ; Duguay, S. ; Zorc, Hrvoje ; Radić, Nikola ; Pivac, Branko ; Slaoui, A. ; Bernstorff, S.
engleski
Silicon nanoparticles formation in annealed SiO/SiO2 multilayers
We present a study on amorphous SiO/SiO2 superlattice performed by grazing-incidence small-angle X-ray scattering (GISAXS). Amorphous SiO/SiO2 superlattices were prepared by high-vacuum evaporation of 3 nm thin films of SiO and SiO2 (10 layers each) onto Si(1 0 0) substrate. After the deposition, samples were annealed at 1100 1C for 1 h in vacuum, yielding to Si nanocrystals formation. Using a Guinier approximation, the shape and the size of the crystals were obtained. The size of the growing nanoparticles in the direction perpendicular to the film surface is well controlled by the bilayer thickness. However, their size varies more significantly in the direction parallel to the film surface.
Si nanostructures; SiO/SiO2 amorphous superlattice; Small-angle X-ray scattering
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Podaci o izdanju
38 (1-2)
2007.
50-53
objavljeno
1386-9477
1873-1759
10.1016/j.physe.2006.12.023