engleski

Microstructural properties of DC magnetron sputtered a-Si:H and a-Si_(1-x)C_x:H

A series of a-Si:H and a-Si_(1-x)C_x:H samples have been examined by IR and Raman spectroscopy as a function of hydrogen (5-30 at%) and carbon (0-20 at%) content. From medium and near IR measurements, the void density and distribution of voids size were estimated. It has been found that the void density increases, the void size distribution broadens and its mean value shifts towards higher values as the hydrogen and carbon concentration increases. by the Raman shift analysis it has been concluded that the increase of hydrogen concentration brings about structural relaxation accompanied by decreasing Si-Si bond angle deviation, while the increasing of carbon concentration has the oposite effect.

magnetron sputtering ; amorphous silicon ; amorphous silicon carbide

Conference: SESSION ON APPLICATIONS OF SURFACE SCIENCE AND ELECTRONIC MATERIALS, 8TH INTERNATIONAL CONF ON SOLID SURFACES ( ICSS-8 ) / 12TH INTERNATIONAL VACUUM CONGRESS ( IVC-12 )