The preparation of thin silica layers by wet thermal oxidation (CROSBI ID 529056)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Gebavi, Hrvoje ; Ivanda, Mile ; Hršak, Damir ; Ristić, Davor ; Furić, Krešimir ; Musić, Svetozar ; Ristić, Mira ; Žonja, Sanja ; Biljanović, Petar ; Gamulin, Ozren ; Balarin, Maja ; Montagna, M. ; Ferarri, M. ; Righini, G.C.
engleski
The preparation of thin silica layers by wet thermal oxidation
The preparation of thin silica layers was done by wet thermal oxidation of silicon in diffusion furnace. Reaction temperature was 1141 °C. The silicon wafer of 5.08 cm in diameter, 280 μ m thicknesses, 111 orientations, n-doped with P has been used as precursor. Thickness of produced layer was 72 - 108 μ m. The base of diffusion furnace was a quartz tube placed in a spiral heater. The flow rate of vapor was constant. Reaction time was varied between 5 and 40 minutes. It was found that there are strong correlation between layer thickness and reaction time. Experimental data confirm theoretical model. When reaction time is longer then 20 minutes experimental data are almost same as theoretical model but there are small deviations at lower temperatures because of thermalization time.
silica layer; wet thermal oxidation; silicon
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Podaci o prilogu
105-107.
2007.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the VIIth International Conference Preparation of ceramic materials
Plešingerova, Beatrice ; Kuffa, Tarzicius
Košice: Technical University of Košice
978-80-8073-806-8
Podaci o skupu
International Conference Preparation of ceramic materials (7 ; 2007)
predavanje
18.07.2007-20.07.2007
Košice, Slovačka