engleski

cw laser crystallization of amorphous silicon: Thermal or athermal process

Hydrogenated amorphous silicon films have been deposited by DC magnetron sputtering on different substrates with different thicknesses and hydrogen concentration. The microscopic area of amorphous layers was crystallized by the focused beam of cw laser. The laser threshold power for transition from the amorphous to crystalline state is dependent on the radius of laser beam, film thickness, material of substrate and hydrogen concentration. These experimental results show that cw laser crystallization of amorphous silicon is a thermal induced process.

amorphous silicon ; laser crystallization ; Raman spectroscopy

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