engleski

"Boson" peak in Raman spectra of hydrogenated amorphous silicon

Hydrogenated amorphous silicon films were prepared by a dc magnetron sputtering method. Broad bacground signal observed in Raman spectra near the excitation line which is recently attributed to the recombination of nonthermal electron with nonhermal holes was decomposed from the phonon bands. The Stokes/anti-Stokes ratio, depolarization ratio and the shape of the bacground signal have the characteristics typical for the non-continous structure of amorphous silicon, composed of the blobs of strongly conected silicon atoms placed around hydrogen clusters.

amorphous silicon ; Raman spectroscopy ; boson peak

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