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Raman study of light-induced changes in silicon-hydrogen bond stretching vibration in a-Si:H (CROSBI ID 133220)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Ivanda, Mile ; Gamulin, Ozren ; Furić, Krešimir ; Gracin, davor Raman study of light-induced changes in silicon-hydrogen bond stretching vibration in a-Si:H // Journal of molecular structure, 267 (1992), 275-280

Podaci o odgovornosti

Ivanda, Mile ; Gamulin, Ozren ; Furić, Krešimir ; Gracin, davor

engleski

Raman study of light-induced changes in silicon-hydrogen bond stretching vibration in a-Si:H

Amorphous hydrogenated silicon films prepared by dc magnetron sputtering method was soaked by light of argon ion laser and studied "in situ" by raman spectroscopy in order to resolve the apparent inconsistency in the assignments of the silicon-hydrogen bond stretching vibrations. The bond-stretching frequency region between 1850 and 2250 cm-1 was decomposed in two Gaussian shaped bands. The laser -induced changes at the power density from 20 to 500 W/cm2 show: a) the continuous increase of the integrated intensity of the band at about 2100 cm-1 compaed to the band at about 2000 cm-1 ; b) the frequency shift of both bands to the lower values c) the line width decrease of the band at about 2000 cm-1 and d) linewidth increase of the band at about 2100 cm-1. Contrary to the previous proposals that in the stretching region of the Raman spectra only two bands exist, our data show the existence of four vibration bands.

amorphous silicon ; raman spectroscopy ; stretchin vibration of silicon-hydrogen bonds

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Podaci o izdanju

267

1992.

275-280

objavljeno

0022-2860

1872-8014

Povezanost rada

Fizika

Indeksiranost