Vertical silicon-on-nothing FET: analytical model of subthreshold slope (CROSBI ID 529656)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav
engleski
Vertical silicon-on-nothing FET: analytical model of subthreshold slope
Analytical model of subtreshold slope for Vertical Fully-Depleted Silicon-On-Nothing FET is developed. The analytical model is based on the captive model in subtreshold region. The voltage-doping transformation is used for modeling short-channel effects. The analyrical model has been verified by comparing the calculated values with the two-dimensional numerical device simulator results obtained by Medici. The developed model fits the Medici results.
subtreshold slope; silicon-on-nothing; vertical FET
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
71-74-x.
2007.
objavljeno
Podaci o matičnoj publikaciji
43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING
Trontelj, J. ; Novak, F. ; Šorli, I.
Ljubljana: Society for Microelectronics, Electronic Components and Materials (MIDEM)
Podaci o skupu
43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING
predavanje
12.07.2007-14.07.2007
Bled, Slovenija