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Structural and Optical Properties of Silicon Nanocrystals Prepared by Phase Separation of Si-rich Silicon Oxide

The Si-rich silicon oxide (SiO_x) thin films are prepared on silica substrates by low pressure chemical vapor deposition (LPCVD) method and by physical vapor deposition method (PVD). The oxygen concentration x is controlled by the ratio of the partial pressures of N_2O and SiH_4 gases in the reaction chamber. In order to induce the phase separation on SiO_2 and Si nanostructures the samples are annealed at the temperatures of 900-1000°C. The structural and optical properties of the samples are investigated by Raman spectroscopy.

Si-rich silicon oxide; LPCVD; PVD; Raman spectroscopy

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