engleski

Mechanism of Enhancement in Elektromagnetic Properties of MgB_2 by Nano SiC Doping

A comparative study of pure, SiC, and C doped MgB_2 wires has revealed that the SiC doping allowed C substitution and MgB_2 formation to take place simultaneously at low temperatures. C substitution enhances H_c2, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_c. The irreversibility field (H_irr)for the SiC doped sample reached the benchmarking value of 10T at 20K, exceeding that of NbTi at 4.2K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB_2.

MgB2; superconductor; critical current density

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