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Complementarities of nuclear-based analytical techniques for the characterization of thin film technological materials (CROSBI ID 134254)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Bamford, S. ; Kregsamer, P. ; Fazinić, Stjepko ; Jakšić, Milko ; Wegrzynek, D. ; Chinea-Cano, E. ; Markowicz, A. Complementarities of nuclear-based analytical techniques for the characterization of thin film technological materials // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 261 (2007), 1-2; 541-543-x

Podaci o odgovornosti

Bamford, S. ; Kregsamer, P. ; Fazinić, Stjepko ; Jakšić, Milko ; Wegrzynek, D. ; Chinea-Cano, E. ; Markowicz, A.

engleski

Complementarities of nuclear-based analytical techniques for the characterization of thin film technological materials

Two thin film technological materials (A/B) from the aerospace industry have been characterized for their elemental composition, for the purpose of determining their purity and trace element distribution. The results contribute to the assessment of the materials’ suitability as part of a spacecraft’ s thermal hardware. Analysis was done using a combination of PIXE/RBS and energy dispersive X-ray fluorescence (EDXRF) analytical techniques. Samples of the materials were analyzed with PIXE/RBS system using 2 MeV proton beam from a 1 MV Tandetron accelerator and also with separate EDXRF systems employing Am-241 and Mo-secondary target as excitation sources. PIXE/RBS measurements enabled identification of the elemental composition and elucidation of the layer structure of the materials. From the PIXE/RBS results, Am-241-excited EDXRF technique was selected for quantitative determination of indium (In) and tin (Sn) by their K-X-rays, after reasonable absorption corrections. A comparison has been made of the results obtained from EDXRF and PIXE/RBS. Material A has been found to be a thin film with three layers, while material B is a thin film comprised of four layers. Thicknesses and compositions (including trace elements) of all layers have been determined. The limitation of EDXRF in the analysis of inhomogeneously distributed elements was overcome by using PIXE/RBS as an appropriate complimentary technique.

characterization; thin films; nuclear-based techniques; EDXRF

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Podaci o izdanju

261 (1-2)

2007.

541-543-x

objavljeno

0168-583X

Povezanost rada

Fizika

Indeksiranost