Technological constrains of bulk FinFET structure in comparison with SOI FinFET (CROSBI ID 532001)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
engleski
Technological constrains of bulk FinFET structure in comparison with SOI FinFET
In order to obtain bulk FinFET characteristics that closely match SOI FinFET characteristics, meaning DIBL below 70 mV/V and subthreshold swing below 100mV/dec, source/drain junction depths must be aligned to the bottom of the gate and the fin width of the bulk FinFET must be 20 nm at most assuming the gate length of 50nm. Bulk FinFET characteristics can be improved by reducing S/D junction depth with respect to the bottom of the gate which can be easily accomplished in fabrication.
FinFET; bulk; body-tied; silicon-on-insulator (SOI)
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Podaci o prilogu
2007.
objavljeno
Podaci o matičnoj publikaciji
Podaci o skupu
International Semiconductor Device Research Symposium 2007
poster
12.12.2007-14.12.2007
Sjedinjene Američke Države