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Effect of tin level on particle size and strain in nanocrystalline ITO (CROSBI ID 532033)

Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija

Popović, Jasminka ; Gržeta, Biserka ; Tkalčec, Emilija ; Tonejc, Anđelka M. ; Bijelić, Mirjana ; Goebbert, Christian Effect of tin level on particle size and strain in nanocrystalline ITO // Size-Strain V. Diffraction Analysis of the Microstructure of Materials : abstracts / Mittermeijer, Eric ; Leineweber, Andreas ; Welzel, Udo (ur.). Garmisch-Partenkirchen: Max Planck Institute for Metals Research, 2007. str. 79-79

Podaci o odgovornosti

Popović, Jasminka ; Gržeta, Biserka ; Tkalčec, Emilija ; Tonejc, Anđelka M. ; Bijelić, Mirjana ; Goebbert, Christian

engleski

Effect of tin level on particle size and strain in nanocrystalline ITO

Tin-doped indium oxide (ITO) is an advanced material with many electronic and optical applications due to its high electrical conductivity and transparency to light. These properties are associated both with structure and microstructure. Indium oxide crystallizes in a cubic bixbyite-type structure in space group Ia3. It has 80 atoms in unit cell, where 32 sites are occupied by cations in two non-equivalent six-fold coordinated sites (B and D sites, respectively). With tin doping a charge imbalance is created due to a different valence of indium and tin ions. The charge imbalance can be compensated by incorporation of interstitial oxygen atoms. Both tin cations and interstitial oxygen anions are considered as defects in indium oxide structure. This work focuses on influence of tin doping to particle size and strain of nanocrystalline In_2O_3. Powder ITO samples containing 2-14 at% Sn were prepared by a sol-gel technique from InCl3 and SnCl4 reagent grade chemicals, followed by thermal treatment at 300 °C for 2 h. As-prepared samples were additionally annealed at 1000 °C for 1 h and slowly cooled to RT. Both, the as-prepared and the annealed samples were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Diffraction lines were broadened indicating the nanosized crystallites in the samples. The line broadening increased with the tin content in both series of samples, the as-prepared and the annealed samples, broadening being less pronounced for the latter ones. Analysis of line broadening was performed in Rietveld structure refinement by the PANalytical XPert High-Score Plus program. Silicon powder (Koch-Light Lab. Ltd., 99.999% purity) was used as instrument standard. For the as-prepared samples crystallite sizes decreased and strain increased with the increase of tin content. Annealing at 1000 °C promoted a grain growth and lessening of lattice strain for each sample. However, crystallite sizes and lattice strain followed the dependence on tin content as in the as-prepared samples. The interplanar distances, d, in the examined samples determined by a selected area electron diffraction (SEAD) were in accordance with XRD data. TEM studies proved that ITO samples contained nanocrystalline parti-cles. The particles had nearly spherical shape at lower tin doping level, while at higher doping level (>8 at%) they appeared to be elongated. The crystal-lite sizes measured by TEM well agreed with those obtained by XRD line broadening analysis.

tin-doped indium oxide (ITO); size-strain analysis; rietveld refinement; transition electron microscopy

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Podaci o prilogu

79-79.

2007.

objavljeno

Podaci o matičnoj publikaciji

Size-Strain V. Diffraction Analysis of the Microstructure of Materials : abstracts

Mittermeijer, Eric ; Leineweber, Andreas ; Welzel, Udo

Garmisch-Partenkirchen: Max Planck Institute for Metals Research

Podaci o skupu

Size-Strain V. Diffraction Analysis of the Microstructure of Materials

poster

07.10.2007-09.10.2007

Garmisch-Partenkirchen, Njemačka

Povezanost rada

Fizika, Kemija