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Grazing incidence small-angle X-ray scattering studies of the synthesis and growth of CdS quantum dots from constituent atoms in SiO2 matrix

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of CdS quantum dots (QDs) from Cd and S atoms implanted in SiO2. For a dose of 1017/cm2, the partial synthesis of CdS QDs occurred already during implantation, with only moderate size increase upon subsequent annealing up to Ta=1073 K. The dynamics of QD synthesis and growth were considerably different already for two times lower dose, where synthesis started only after annealing at Ta = 773 K, with a strong increase of the size of QDs upon annealing at higher Ta. Results suggest that high-dose implantation followed by low-T annealing could lead to better defined sizes and narrower size distributions of QDs.

nanocrystals ; quantum dots ; X-ray scattering ; SAXS ; GISAXS ; implantation ; CdS

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