engleski

Analysis of 2D GISAXS patterns obtained on semiconductor nanocrystals

Grazing incidence small-angle X-ray scattering (GISAXS) was applied in the study of semiconductor nanocrystals embedded in a light matrix. The appropriate mathematical apparatus was developed, so that a full characterization of 3D ensemble of nanoparticles, formed in the implanted layer, can be obtained from GISAXS spectra recorded on two-dimensional (2D) detector. The investigated US nanocrystals in SiO2 substrate were formed by ion beam synthesis and subsequent annealing at 1273 K. From the fits to the theoretical expressions, the average particle diameter, the shape, as well as the size distribution were determined. The obtained results are in good agreement with TEM results performed on the analogous samples.

GISAXS; nanocrystals; ion implantation; semiconductor; QDs; SiO2

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