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Defects Agreggates in Silicon (CROSBI ID 35040)
Prilog u knjizi | izvorni znanstveni rad
Corbett, J.W. ; Corelli, J. ; Desnica, Uroš ; Snyder, L.C.
Defects Agreggates in Silicon // Microscopic Identification of Electronic Defects in Semiconductors / Johnson, N.M. ; Bishop, S. ; Watkins, G.D. (ur.). Pittsburgh (PA): Materials Research Society, 1985. str. 243-255-x
Podaci o odgovornosti
Corbett, J.W. ; Corelli, J. ; Desnica, Uroš ; Snyder, L.C.
engleski
Defects Agreggates in Silicon
In this brief review we consider the vacancy-related, the vacancy-oxigen-related and the vacancy-hydrogen related defects. We note the common oportunity for chemically-driven partial disociation of defects.
Defects, semiconductors, computer simulation, microscopic identification
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Podaci o prilogu
243-255-x.
objavljeno
Podaci o knjizi
Microscopic Identification of Electronic Defects in Semiconductors
Johnson, N.M. ; Bishop, S. ; Watkins, G.D.
Pittsburgh (PA): Materials Research Society
1985.
0-553-57777-8
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