Tellurium related deep traps in silicon (CROSBI ID 35062)
Prilog u knjizi | izvorni znanstveni rad
Podaci o odgovornosti
Desnica, Dunja ; Desnica, Uroš V.
engleski
Tellurium related deep traps in silicon
The authors study the properties of Te deep levels in Si. They discuss the results obtained by previous authors for Hall effect, DLTS and IR spectroscopy studies and also analyse data from earlier Mossbauer effect and Rutherford backscattering analyses (21 References).
deep level transient spectroscopy; deep levels; elemental semiconductors; Hall effect; Mossbauer effect; Rutherford backscattering; silicon; tellurium
Izdanje u NY ima ISBN: 0-387-51073-7
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Podaci o prilogu
153-158-x.
objavljeno
Podaci o knjizi
Semiconductor Silicon
Harbeke, G ; Schulz, MJ
Berlin : New York: Springer
1989.
0-387-51073-7
