engleski

Optical cross section for the EL2→EL2* metastable transformation

A simple and accurate method for the determination of the σ * optical cross section governing the EL2->EL2* transformation kinetics in GaAs is proposed. Previously reported σ * values are critically examined and corrected properly. The obtained absolute values of σ * in the 0.9– 1.35eV photon energy range all falling onto the same universal curve are presented. The σ *(Eph) curve exhibits a maximum amounting to 4×10^-17 cm2 at 1.18 eV, and it drops below 10^-20 cm2 for photon energies less than 0.95 eV.

semiconductors ; III-V ; GaAs ; EL2

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