Low pressure chemical vapor deposition of thin SiOx films by chemical reaction of SiH4, O2 and N2: gaseous: preparation and characterization (CROSBI ID 539986)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Vilman, Viktor ; Ivanda, Mile ; Biljanović, Petar ; Gamulin, Ozren ; Ristić, Davor ; Furić, Krešimir ; Ristić, Mira ; Musić, Svetozar
engleski
Low pressure chemical vapor deposition of thin SiOx films by chemical reaction of SiH4, O2 and N2: gaseous: preparation and characterization
The silicon rich silicon oxide (SiOx) thin films were prepared in LPCVD reactor, by thermal oxidation of silane in oxygen-nitrous oxide atmosphere. The stoichiometry coefficient x was controlled by the substrate temperature ant the ration of the partial pressures of silane and oxidants O2 and N2O. The structural and optical properties of prepared SiOx films were analyzed by infrared and Raman spectroscopy and scanning electron microscopy. The reaction of silane with oxygen ant nitrous oxide results in higher deposition rates of SiOx film when compared to the cases of silane/oxygen reaction of silane/nitrous oxide reaction. The surface properties of obtained films exhibit good g+homogeneity as well as superior quality when compared to the reaction with nitrous oxide, only.
LPCVD; SiOx films; stechiomety coefficient; IR and Raman spcetroscopy
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Podaci o prilogu
35-37.
2008.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of MIPRO 2008
Biljanović, Petar ; Skala, Karolj
Rijeka: Denona
978-953-233-036-6
Podaci o skupu
31th International Convention, MIPRO 2008
predavanje
26.05.2008-30.05.2008
Opatija, Hrvatska