engleski

STRUCTURAL ANALYSIS OF AMORPHOUS Si FILMS PREPARED BY MAGNETRON SPUTTERING

We present a study of structural changes occurring in thin amorphous silicon (a-Si). The a-Si films were deposited on single-crystalline Si substrates held at room temperature or 200°C by magnetron sputtering of a Si target in pure Ar atmosphere, and therefore the films were hydrogen-free. All samples were annealed in vacuum and subsequently studied by EPR, XRR and GISAXS. A strong decrease in the dangling bonds content at lower annealing temperatures, and then an increase of it at around 550°C, suggested significant structural changes. In parallel the samples were studied by GISAXS which confirmed changes at the nanometric scale attributed to voids in the material. A nice correlation of the results of the two techniques shows advantages of this approach in the analysis of structural changes in a-Si material.

amorphous silicon; EPR; GISAXS; GIXRD

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