Radiation defects in EFG polycrystalline Si for solar cells (CROSBI ID 541886)
Prilog sa skupa u zborniku | sažetak izlaganja sa skupa | međunarodna recenzija
Podaci o odgovornosti
Slunjski, Robert ; Capan, Ivana ; Jakšić, Milko ; Pivac, Branko ;
engleski
Radiation defects in EFG polycrystalline Si for solar cells
Intrinsic point defect population in polycrystalline silicon is of the particular importance due to its influence on the electronic properties of material. A study of intrinsic point defects behavior is additionally complicated due to the interaction with the present impurities and different structural defects. Experiments were performed on EFG polycrystalline silicon material rich with carbon and different structural defects such as dislocations and various grain boundaries. Samples were irradiated with 1.2 MeV gamma rays from 60Co source to various doses to introduce simple point defects into the bulk of the material. For the comparison samples have also been irradiated with 2-4 MeV protons to various doses. The proton irradiation is known to produce more complex defects than just point-like defects. Although such material typically exhibits great spatial inhomogeneity we have ensured reproducibility of our measurements. The results obtained with deep-level transient spectroscopy showed the great difference in two types of radiation. Comparing the similar effect on CZ single-crystal Si samples the clear effect of carbon is shown and discussed.
polycrystalline silicon ; defects ; dlts ; solar cells
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nije evidentirano
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nije evidentirano
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Podaci o prilogu
120-120.
2008.
objavljeno
Podaci o matičnoj publikaciji
Programme & Book of abstracts of the 12th JVC, 10th EVC, and 7th Annual Meeting of GVS
Bohatka, S.
Deberecen: REXPO Kft.
Podaci o skupu
12th JVC, 10th EVC, 7th Annual meeting of GVS
poster
22.09.2008-26.09.2008
Balatonalmádi, Mađarska