engleski

Nitrogen influence on dangling bond configuration in silicon-rich SiOx : N, H thin films

Paramagnetic centers were studied in different SiOx:N, H films deposited by plasma enhanced chemical vapor deposition in a wide composition range. It is shown that the presence of nitrogen impurities significantly affects the total dangling bond concentration, as revealed after sample irradiation. In particular, the presence of N-H bonds induces a release of the film stress, which may be related to such concentration. It is also shown that both weak Si-Si bonds and Si-H bonds may serve as precursors for the dangling bond formation.

thin films; SiOx; electron paramagnetic resonance

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