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Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy (CROSBI ID 85782)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Fang, Z-Q. ; Look, D. C. ; Pavlović, Mladen ; Desnica, Uroš Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy // Journal of Electronic Materials, 28 (1999), 27-30-x

Podaci o odgovornosti

Fang, Z-Q. ; Look, D. C. ; Pavlović, Mladen ; Desnica, Uroš

engleski

Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy

The role of contacts in characterization of traps in semi-insulating (SI) GaAs by thermally stimulated current (TSC) methods has been demonstrated by comparing alloyed In and soldered In contacts. Alloyed In contacts, which have an ohmic characteristic, assure high sensitivities in both TSC and temperature dependent photocurrent (PC), and both are important for determining the trap concentrations in SI GaAs. On the other hand, soldered In contacts, which act like Schottky barriers, cause a significant reduction of both PC and TSC, particularly at low temperatures, and can lead to a misinterpretation of TSC results.

contacts; deep traps; thermally stimulated current spectroscopy; TSC; semi-insulating GaAs

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Podaci o izdanju

28

1999.

27-30-x

objavljeno

0361-5235

Povezanost rada

Fizika

Indeksiranost