engleski

Quantitative analysis of hydrogen in thin films using TOF ERDA spectroscopy

Determination of atomic concentrations in thin films is one of key problems in materials science. Time-of-Flight Elastic Recoil Detection Analysis (TOF ERDA) is a powerful method for depth profiling of light and medium mass elements in near surface layers of material. However, due to poor detection efficiency those spectrometers are not commonly used for hydrogen analysis. We have performed some improvements in order to increase detection efficiency and to make spectrometer more suitable for hydrogen analysis. The spectrometer performance was tested on amorphous Si samples implanted with H- and D- and hydrogenised Si standard referent material. Sensitivity for hydrogen in silicon matrix was found to be several tenths of ppm with a surface depth resolution of ~15 nm.

Hydrogen analysis ; TOF ERDA

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