engleski

Compensating Effect of Platinum in n- and p- type Silicon

The influence of a platinum, a multilevel deep impurity, on the semiconductor's resistivity is being examined in this paper. The general consideration is made; all levels have been taken into consideration. The calculated data are compared with the measured values obtained for platinum in both, n- and p- type silicon. According to the calculations the significant difference between the entropy values *_n of acceptor level in n and p type semiconductor has been established. According to that, we may conclude that the platinum in p type of silicon introduces two acceptor levels and in n type only one. *=hi

platinum; deep impurity; entropy; acceptor levels

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