Suppression of Corner Effects in Triple-Gate Bulk FinFETs (CROSBI ID 549427)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
engleski
Suppression of Corner Effects in Triple-Gate Bulk FinFETs
This paper presents a method of suppressing kink effects which originate in the corners of triple-gate bulk FinFETs. We propose corner implantation to turn off the parasitic corner device which has lower threshold voltage than the bulk device. This method is investigated in triple-gate bulk FinFETs by 3D numerical simulations. Threshold voltage shift of 0.434 V with a decrease in on-state current of only 23% is achieved, while the kink effect in devices' current-voltage characteristics is completely eliminated. Corner implantation improves devices' immunity to short-channel effects.
bulk; corner effect; kink effect; FinFET; implantation; short-channel effects
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
1-6.
2009.
objavljeno
Podaci o matičnoj publikaciji
Mironenko, I. ; Mikerov, A.
Sankt Peterburg: Institute of Electrical and Electronics Engineers (IEEE)
978-1-4244-3861-7
Podaci o skupu
International IEEE Conference EUROCON 2009
poster
18.05.2009-23.05.2009
Sankt Peterburg, Ruska Federacija
