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Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors

The spectral deterioration of Hamamatsu S5821 silicon photodiodes for ion types and energies frequently used in Ion Beam Analysis was investigated. Focused proton beams with energies 430 keV and 2 MeV were applied to generate radiation damage via an area selective ion implantation in unbiased diodes at room temperature. The variations of spectroscopic features were measured “ in situ” by Ion Beam Induced Current (IBIC) method as a function of fluence, within the 109– 5 × 1012 ion/cm2 range and diode bias voltages, between 0 and 100 V. An empirical model has been developed to describe the radiation damage. Equations are derived for the variations of the normalized peak position and peak width. The derived empirical equations are physically correct, as far as they account for the superposition of the influence of charge carrier trapping by native and radiation-induced defects and for the effect of charge carrier velocity saturation with electric field strength, as well.

Si pin photodiode; radiation damage; IBIC; microbeam; charge collection efficiency; energy resolution

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