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Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix (CROSBI ID 156541)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Buljan, Maja ; Pinto Sara ; Kashtiban, Reza J. ; Rolo, Anabela G. ; Chahboun, A. ; Bangert, Ursel ; Levichev, Sergey ; Holy, Vaclav ; Gomes, Maria J. M. Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix // Journal of applied physics, 106 (2009), 8; 084319, 6. doi: 10.1063/1.3248373

Podaci o odgovornosti

Buljan, Maja ; Pinto Sara ; Kashtiban, Reza J. ; Rolo, Anabela G. ; Chahboun, A. ; Bangert, Ursel ; Levichev, Sergey ; Holy, Vaclav ; Gomes, Maria J. M.

engleski

Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix

In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle X-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement and concentration of quantum dots in the matrix, as well as the Si:Ge content.

Semiconductor quantum dots ; SiGe ; GISAXS

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Podaci o izdanju

106 (8)

2009.

084319

6

objavljeno

0021-8979

10.1063/1.3248373

Povezanost rada

Fizika

Poveznice
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