Structural study of Si1-x Gex nanocrystals embedded in SiO2 films (CROSBI ID 158966)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Pinto, S.R.C. ; Kashtiban, R.J. ; Rolo, A.G. ; Buljan, Maja ; Chahboun, A. ; Bangert, U. ; Barradas, N.P. ; Khodorov, A. ; Alves, E. ; Gomes, M.J.M.
engleski
Structural study of Si1-x Gex nanocrystals embedded in SiO2 films
We have investigated the structural properties of Si1-xGex nanocrystals formed in an amorphous SiO2 matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystals size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si1-xGex nanocrystals with average sizes between 3 to 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.
Si1-xGex ; nanocrystals ; SiO2 ; HRTEM ; GISAXS ; Raman ; Flash memory ; semiconductor
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