Generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation (CROSBI ID 158988)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Buljan, Maja ; Bogdanović Radović, Ivančica ; Karlušić, Marko ; Desnica, Uroš ; Radić, Nikola ; Skukan, Natko ; Dražić, Goran ; Ivanda, Mile ; Gamulin, Ozren ; Matej, Zdenek ; Valeš, Vaclav ; Grenzer, Joerg ; Cornelius, Thomas ; Metzger, Hartmund Till ; Holy, Vaclav
engleski
Generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation
We studied the generation of an ordered quantum dot array in an amorphous silica matrix by ion beam irradiation. In particular we investigated the influence of the irradiation process on the nucleation of Ge clusters, on the correlations in their positions and on the crystalline quality of Ge quantum dots formed after subsequent annealing. We have developed a method for the description of the intensity of grazing-incidence x-ray small angle scattering from irradiated multilayers, that enables a precise determination of the arrangement of quantum dots as well as their position correlation and size distribution. The analysis shows that the irradiation causes an ordering of Ge clusters along the irradiation direction, substantially improving the correlation in their positions. The observed phenomena are explained and simulated by a Monte-Carlo model based on the modification of local Ge density induced by ion tracks in the irradiated multilayers.
Ge; quantum dots; ion beam irradiation; quantum dot lattices
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Podaci o izdanju
81
2010.
085321-1-085321-8
objavljeno
1098-0121
10.1103/PhysRevB.81.085321