Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy (CROSBI ID 161610)
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Podaci o odgovornosti
Brewster, Megan ; Schimek, Oliver ; Reich, Stephanie ; Gradečak, Silvija
engleski
Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy
The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap Eg. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phonon-scattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at Eg, allowing for the development and optimization of nanowire optoelectronic devices.
Fröhlich coupling ; GaAs ; nanowires
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Podaci o izdanju
80 (20)
2009.
201314-201317
objavljeno
1098-0121
10.1103/PhysRevB.80.201314